<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>0872-1904</journal-id>
<journal-title><![CDATA[Portugaliae Electrochimica Acta]]></journal-title>
<abbrev-journal-title><![CDATA[Port. Electrochim. Acta]]></abbrev-journal-title>
<issn>0872-1904</issn>
<publisher>
<publisher-name><![CDATA[Sociedade Portuguesa de Electroquímica]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S0872-19042003000100002</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Galvanostatic Growth of Passivating Films Under Transient Conditions. I. Model and Quantitative Analysis for the Zn/ZnO System]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[D’Alkaine]]></surname>
<given-names><![CDATA[C.V.]]></given-names>
</name>
<xref ref-type="aff" rid="A01"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Berton]]></surname>
<given-names><![CDATA[M.A.C.]]></given-names>
</name>
<xref ref-type="aff" rid="A01"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Tulio]]></surname>
<given-names><![CDATA[P.C.]]></given-names>
</name>
<xref ref-type="aff" rid="A01"/>
</contrib>
</contrib-group>
<aff id="A01">
<institution><![CDATA[,Group of Electrochemistry and Polymers  ]]></institution>
<addr-line><![CDATA[São Carlos SP]]></addr-line>
<country>Brazil</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>00</month>
<year>2003</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>00</month>
<year>2003</year>
</pub-date>
<volume>21</volume>
<numero>1</numero>
<fpage>15</fpage>
<lpage>32</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://scielo.pt/scielo.php?script=sci_arttext&amp;pid=S0872-19042003000100002&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://scielo.pt/scielo.php?script=sci_abstract&amp;pid=S0872-19042003000100002&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://scielo.pt/scielo.php?script=sci_pdf&amp;pid=S0872-19042003000100002&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[On the basis of an ohmic model and a Tafel equation describing relations between current density and overpotentials in the film and at the metal/film interface, respectively, it is shown that a quantitative analysis of galvanostatic transients for the growth of passivating ultra-thin films on the so-called non-noble metals can be obtained. As an example, the growth of ZnO on Zn in a boric/borate buffer solution is considered. In this case, the values of the transfer coefficient and the exchange current density of the reaction at the metal/film interface were found to be 1.2 and 0.11 mA cm-2, respectively. It was shown that a single, first film occurred at low current densities and two films at high ones. The ionic resistivity inside the single, first film, during the transients, has an initial constant value region followed by a final increase indicating the aging process. For this variation the evolution of the point defect concentrations is taken into account. For the variation of the ionic resistivity with the galvanostatic current density two types of behaviors were found, depending on the current density. An interpretation of these results is advanced in terms of the concentrations, mobilities and recombination rate of point defects inside the film.]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[passivation kinetics]]></kwd>
<kwd lng="en"><![CDATA[ultra-thin films]]></kwd>
<kwd lng="en"><![CDATA[galvanostatic experiments]]></kwd>
<kwd lng="en"><![CDATA[quantitative analysis]]></kwd>
<kwd lng="en"><![CDATA[zinc]]></kwd>
</kwd-group>
</article-meta>
</front><body><![CDATA[ <p align=center ><b>Galvanostatic Growth of Passivating Films Under Transient    Conditions. I. Model and Quantitative Analysis for the Zn/ZnO System</b></p>     <p align=center >&nbsp;</p>          <p align="center" ><b>C.V. D’Alkaine<a name="top"></a> <a href="#1">*</a> M.A.C.    Berton, P.C. Tulio</b></p>      <p align="center" ><i>Group    of Electrochemistry and Polymers, DQ-UFSCar- 13565-905 São Carlos (SP), Brazil</i></p>     <p align="center" ></p>     <p align=center >Received 25 September 2002; accepted in revised form 13 December    2002</p>     <p align=center >&nbsp;</p>          <p ><b>Abstract</b></p>      <p >On the basis of an ohmic model and a Tafel equation describing relations between current density and overpotentials in the film and at the metal/film interface, respectively, it is shown that a quantitative analysis of galvanostatic transients for the growth of passivating ultra-thin films on the so-called non-noble metals can be obtained. As an example, the growth of ZnO on Zn in a boric/borate buffer solution is considered. In this case, the values of the transfer coefficient and the exchange current density of the reaction at the metal/film interface were found to be 1.2 and 0.11 mA cm<sup>-2</sup>, respectively. It was shown that a single, first film occurred at low current densities and two films at high ones. The ionic resistivity inside the single, first film, during the transients, has an initial constant value region followed by a final increase indicating the aging process. For this variation the evolution of the point defect concentrations is taken into account. For the variation of the ionic resistivity with the galvanostatic current density two types of behaviors were found, depending on the current density. An interpretation of these results is advanced in terms of the concentrations, mobilities and recombination rate of point defects inside the film</p>          <p ><b><i>Keywords</i>:</b> passivation kinetics, ultra-thin films, galvanostatic    experiments, quantitative analysis, zinc.</p>     ]]></body>
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<ref-list>
<ref id="B1">
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<person-group person-group-type="author">
<name>
<surname><![CDATA[Ashworth]]></surname>
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</name>
<name>
<surname><![CDATA[Fairhurst]]></surname>
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</name>
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